20V N+N-Channel Enhancement Mode MOSFET
DESCRIPTION
The 8H02ETSuses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 2.5V.
GENERAL FEATURES
VDS = 20V,ID = 7A
8H02TS RDS(ON) < 28mΩ @ VGS=2.5V
RDS(ON) < 26mΩ @ VGS=3.1V
RDS(ON) < 22mΩ @ VGS=4V
RDS(ON) < 20mΩ @ VGS=4.5V
ESD Rating:2000V HBM
Application
Battery protection
Load switch Power management
Package Marking and Ordering Information
| Product ID | Pack | Marking | Qty(PCS) |
| 8H02ETS | TSSOP-8 | 8H02ETS WW YYYY | 5000/3000 |
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
| Parameter | Symbol | Limit | Unit |
| Drain-Source Voltage | VDS | 20 | V |
| Gate-Source Voltage | VGS | ±12 | V |
| Drain Current-Continuous@ Current-Pulsed (Note 1) | ID | 7 | V |
| Maximum Power Dissipation | PD | 1.5 | W |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 To 150 | ℃ |
| Thermal Resistance,Junction-to-Ambient (Note 2) | RθJA | 83 | ℃/W |
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing.
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
