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Shenzhen Hua Xuan Yang Electronics Co.,Ltd

City:shenzhen

Province/State:guangdong

Country/Region:china

Contact Person:MrDavid Lee

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6G03S 30V Mosfet Power Transistor Enhancement Mode MOSFET ID 6.5A

Name: 6G03S 30V Mosfet Power Transistor Enhancement Mode MOSFET ID 65A
Brand: Hua Xuan Yang
Price: 1 USD

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Place of Origin :ShenZhen China

Brand Name :Hua Xuan Yang

Certification :RoHS、SGS

MOQ :1000-2000 PCS

Price :Negotiated

Packaging Details :Boxed

Delivery Time :1 - 2 Weeks

Payment Terms :L/C T/T Western Union

Supply Ability :18,000,000PCS / Per Day

Model Number :6G03S

Product name :Mosfet Power Transistor

RDS(ON) :< 37mΩ

ID :6.5A

FEATURE :Low Gate Charge

VGS :-10V

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6G03S 30V N+P-Channel Enhancement Mode MOSFET

Description

The 6G03S uses advanced trench

technology to provide excellent R_DS(ON) and low gate charge .

The complementary MOSFETs may be used to form a

level shifted high side switch, and for a host of other

applications

General Features

N-channel P-channel

N-Channel

V_DS = 30V,I_D =6.5A

R_DS(ON) < 16mΩ@ V_GS=10V

P-Channel

V_DS = -30V,I_D = -7A

R_DS(ON) < 37mΩ @ V_GS=-10V

High power and current handing capability

Lead free product is acquired

Surface mount package

Application

● Power switching application

● Hard Switched and High Frequency Circuits

● Uninterruptible Power Supply

Package Marking and Ordering Information

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

N-CH Electrical Characteristics (TA=25℃unless otherwise noted)

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Surface Mounted on FR4 Board, t ≤ 10 sec.

3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

4. Guaranteed by design, not subject to production

30V N+P-Channel EnhancemeN- Channel Typical Electrical and Thermal Characteristics (Curves)

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