Shenzhen Hua Xuan Yang Electronics Co.,Ltd

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20G04S 40V Mosfet Power Transistor N+P Channel Enhancement Mode MOSFET

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Shenzhen Hua Xuan Yang Electronics Co.,Ltd
City:shenzhen
Province/State:guangdong
Country/Region:china
Contact Person:MrDavid Lee
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20G04S 40V Mosfet Power Transistor N+P Channel Enhancement Mode MOSFET

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Place of Origin :ShenZhen China
Brand Name :Hua Xuan Yang
Certification :RoHS、SGS
MOQ :1000-2000 PCS
Price :Negotiated
Packaging Details :Boxed
Delivery Time :1 - 2 Weeks
Payment Terms :L/C T/T Western Union
Supply Ability :18,000,000PCS / Per Day
Model Number :20G04S
Product name :Mosfet Power Transistor
Type :mosfet transistor
Product ID :20G04S
VDS :40V
Features :Surface mount package
VGS :±20v
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View Product Description

20G04S 40V N+P-Channel Enhancement Mode MOSFET

Description

The 20G04S uses advanced trench

technology to provide excellent RDS(ON) and low gate charge .

The complementary MOSFETs may be used to form a

level shifted high side switch, and for a host of other

applications

General Features

N-Channel

VDS =40V,ID =20A

RDS(ON) < 35mΩ @ VGS=10V

RDS(ON) < 42mΩ @ VGS=4.5V

P-Channel

VDS =-40V,ID = -18A

RDS(ON) <40mΩ @ VGS=-10V

RDS(ON) < 70mΩ @ VGS=-4.5V

High power and current handing capability

Lead free product is acquired

Surface mount package

Application

● Power switching application

● Hard Switched and High Frequency Circuits

● Uninterruptible Power Supply

Package Marking and Ordering Information

20G04S 40V Mosfet Power Transistor N+P Channel Enhancement Mode MOSFET

Absolute Maximum Ratings (TC=25℃unless otherwise noted)
20G04S 40V Mosfet Power Transistor N+P Channel Enhancement Mode MOSFET
N-CH Electrical Characteristics (TA=25℃unless otherwise noted)

20G04S 40V Mosfet Power Transistor N+P Channel Enhancement Mode MOSFET

P-CH Electrical Characteristics (TA=25℃unless otherwise noted)
20G04S 40V Mosfet Power Transistor N+P Channel Enhancement Mode MOSFET
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
N-Channel Typical Characteristics
20G04S 40V Mosfet Power Transistor N+P Channel Enhancement Mode MOSFET20G04S 40V Mosfet Power Transistor N+P Channel Enhancement Mode MOSFET20G04S 40V Mosfet Power Transistor N+P Channel Enhancement Mode MOSFET20G04S 40V Mosfet Power Transistor N+P Channel Enhancement Mode MOSFET20G04S 40V Mosfet Power Transistor N+P Channel Enhancement Mode MOSFET20G04S 40V Mosfet Power Transistor N+P Channel Enhancement Mode MOSFET
20G04S 40V Mosfet Power Transistor N+P Channel Enhancement Mode MOSFET
P-Channel Typical Characteristics
20G04S 40V Mosfet Power Transistor N+P Channel Enhancement Mode MOSFET20G04S 40V Mosfet Power Transistor N+P Channel Enhancement Mode MOSFET20G04S 40V Mosfet Power Transistor N+P Channel Enhancement Mode MOSFET20G04S 40V Mosfet Power Transistor N+P Channel Enhancement Mode MOSFET20G04S 40V Mosfet Power Transistor N+P Channel Enhancement Mode MOSFET20G04S 40V Mosfet Power Transistor N+P Channel Enhancement Mode MOSFET
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