Shenzhen Hua Xuan Yang Electronics Co.,Ltd

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WSP4012 P/N Channel Mosfet Transistor , High Power Transistor For Load Switch

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Shenzhen Hua Xuan Yang Electronics Co.,Ltd
City:shenzhen
Province/State:guangdong
Country/Region:china
Contact Person:MrDavid Lee
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WSP4012 P/N Channel Mosfet Transistor , High Power Transistor For Load Switch

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Place of Origin :ShenZhen China
Brand Name :Hua Xuan Yang
Certification :RoHS、SGS
MOQ :1000-2000 PCS
Price :Negotiated
Packaging Details :Boxed
Delivery Time :1 - 2 Weeks
Payment Terms :L/C T/T Western Union
Supply Ability :18,000,000PCS / Per Day
Model Number :WSP4012
Product name :Mosfet Power Transistor
Features :100% EAS Guaranteed
Applications :Load Switch
Case :Tape/Tray/Reel
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View Product Description
QM4803D​ N-Ch and P-Channel MOSFET

Description

The QM4803D is the highest performance trench
N-ch and P-ch MOSFET with extreme high cell
density , which provide excellent RDSON and
gatecharge for most of the synchronous buck
converter applications .
The QM4803D meet the RoHS and Green Product
requirement 100% EAS guaranteed with
full function reliability approved.

Features
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent CdV/dt effect decline
z 100% EAS Guaranteed
z Green Device Available

Applications

  • z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA
  • z Networking DC-DC Power System
  • z CCFL Back-light Inverter

Product Summery
WSP4012 P/N Channel Mosfet Transistor , High Power Transistor For Load Switch
Absolute Maximum Ratings

WSP4012 P/N Channel Mosfet Transistor , High Power Transistor For Load Switch

Thermal Data
WSP4012 P/N Channel Mosfet Transistor , High Power Transistor For Load Switch
N-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
WSP4012 P/N Channel Mosfet Transistor , High Power Transistor For Load Switch
Guaranteed Avalanche Characteristics
WSP4012 P/N Channel Mosfet Transistor , High Power Transistor For Load Switch
Diode Characteristics
WSP4012 P/N Channel Mosfet Transistor , High Power Transistor For Load Switch
Note :
1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3. The power dissipation is limited by 150℃ junction temperature
4. The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
P-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
WSP4012 P/N Channel Mosfet Transistor , High Power Transistor For Load Switch
Guaranteed Avalanche Characteristics​
WSP4012 P/N Channel Mosfet Transistor , High Power Transistor For Load Switch
Diode Characteristics
WSP4012 P/N Channel Mosfet Transistor , High Power Transistor For Load Switch
Note :
1. The data tested by surface mounted on a 1 inch2
FR-4 board with 2OZ copper.
2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3. The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
N-Channel Typical Characteristics
WSP4012 P/N Channel Mosfet Transistor , High Power Transistor For Load SwitchWSP4012 P/N Channel Mosfet Transistor , High Power Transistor For Load SwitchWSP4012 P/N Channel Mosfet Transistor , High Power Transistor For Load SwitchWSP4012 P/N Channel Mosfet Transistor , High Power Transistor For Load Switch
P-Channel Typical Characteristics
WSP4012 P/N Channel Mosfet Transistor , High Power Transistor For Load SwitchWSP4012 P/N Channel Mosfet Transistor , High Power Transistor For Load SwitchWSP4012 P/N Channel Mosfet Transistor , High Power Transistor For Load SwitchWSP4012 P/N Channel Mosfet Transistor , High Power Transistor For Load Switch
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