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TO-92 C945 Tip Power Transistors VEBO 5V Low Noise NPN

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Shenzhen Hua Xuan Yang Electronics Co.,Ltd
City:shenzhen
Province/State:guangdong
Country/Region:china
Contact Person:MrDavid Lee
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TO-92 C945 Tip Power Transistors VEBO 5V Low Noise NPN

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Place of Origin :ShenZhen China
Brand Name :Hua Xuan Yang
Certification :RoHS、SGS
MOQ :1000-2000 PCS
Price :Negotiated
Packaging Details :Boxed
Delivery Time :1 - 2 Weeks
Payment Terms :L/C T/T Western Union
Supply Ability :18,000,000PCS / Per Day
Model Number :C945
VCBO :60V
VCEO :50V
VEBO :5V
Product name :silicon semiconductor triode type
Tj :150℃
Case :Tape/Tray/Reel
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TO-92 Plastic-Encapsulate Transistors C945 TRANSISTOR (NPN)

FEATURE

Ÿ Excellent hFE linearity

Ÿ Low noise

Ÿ Complementary to A733

MARKING

C945=Device code

Solid dot=Green molding compound device, if none,the normal device

Z=Rank of hFE

XXX=Code

TO-92 C945 Tip Power Transistors VEBO 5V Low Noise NPN

ORDERING INFORMATION

Part Number Package Packing Method Pack Quantity
C945 TO-92 Bulk 1000pcs/Bag
C945-TA TO-92 Tape 2000pcs/Box


MAXIMUM RATINGS (Ta =25 Š unless otherwise noted)

Symbol Parameter Value Unit
VCBO Collector-Base Voltage 60 V
V CEO Collector-Emitter Voltage 50 V
V EBO Emitter-Base Voltage 5 V
I C Collector Current -Continuous 150 mA
PC Collector Power Dissipation 400 mW
TJ Junction Temperature 150
Tstg St orage Temperature -55~+150


ELECTRICAL CHARACTERISTICS

Ta=25 Š unless otherwise specified


Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC=1mA , IE=0 60 V
Collector-emitter breakdown voltage V(BR)CEO IC=100μA , IB=0 50 V
Emitter-base breakdown voltage V(BR)EBO IE=100 μA, IC=0 5 V
Collector cut-off current ICBO VCB=60V, IE=0 0.1 μA
Collector cut-off current ICEO VCE=45V, IB=0 0.1 μA
Emitter cut-off current IEBO VEB=5V ,IC=0 0.1 μA

DC current gain

hFE(1) VCE=6V , IC=1mA 70 700
hFE(2) VCE=6V , IC=0.1mA 40
Collector-emitter saturation voltage VCE(sat) IC=100mA, IB=10mA 0.3 V
Base-emitter saturation voltage VBE(sat) IC=100mA, IB=10mA 1 V
Transition frequency fT VCE=6V,IC=10mA,f=30MHz 200 MHz
Collector output capacitance Cob VCB=10V,IE=0,f=1MHz 3.0 pF

Noise figure

NF

VCE=6V,IC=0.1mA

RG=10kΩ,f=1MHz

10

dB


CLASSIFICATION OF hFE(2)

Rank O Y GR BL
Range 70-140 120-240 200-400 350-700

Typical Characteristics

TO-92 C945 Tip Power Transistors VEBO 5V Low Noise NPN

TO-92 C945 Tip Power Transistors VEBO 5V Low Noise NPN

TO-92 C945 Tip Power Transistors VEBO 5V Low Noise NPN

TO-92 C945 Tip Power Transistors VEBO 5V Low Noise NPN



Package Outline Dimensions

Symbol Dimensions In Millimeters Dimensions In Inches
Min Max Min Max
A 3.300 3.700 0.130 0.146
A1 1.100 1.400 0.043 0.055
b 0.380 0.550 0.015 0.022
c 0.360 0.510 0.014 0.020
D 4.300 4.700 0.169 0.185
D1 3.430 0.135
E 4.300 4.700 0.169 0.185
e 1.270 TYP 0.050 TYP
e1 2.440 2.640 0.096 0.104
L 14.100 14.500 0.555 0.571
0 1.600 0.063
h 0.000 0.380 0.000 0.015



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