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2N3904 Tip Series Transistors Surface Mount High Cell Density Storage Temperature -55-150

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Shenzhen Hua Xuan Yang Electronics Co.,Ltd
City:shenzhen
Province/State:guangdong
Country/Region:china
Contact Person:MrDavid Lee
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2N3904 Tip Series Transistors Surface Mount High Cell Density Storage Temperature -55-150

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Place of Origin :ShenZhen China
Brand Name :Hua Xuan Yang
Certification :RoHS、SGS
MOQ :1000-2000 PCS
Price :Negotiated
Packaging Details :Boxed
Delivery Time :1 - 2 Weeks
Payment Terms :L/C T/T Western Union
Supply Ability :18,000,000PCS / Per Day
Model Number :2N3904
product name :semiconductor triode type
Application :mobile power supply/ led driver/motor control
Material :Silicon
Emitter-Base Voltage :6V
Case :Tape/Tray/Reel
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View Product Description

SOT-89-3L Plastic-Encapsulate Transistors 2N3904 TRANSISTOR (NPN).

FEATURE

Ÿ NPN silicon epitaxial planar transistor for switching and Amplifier applications

Ÿ As complementary type, the PNP transistor 2N3906 is Recommended

Ÿ This transistor is also available in the SOT-23 case with the type designation MMBT3904

2N3904 Tip Series Transistors Surface Mount High Cell Density Storage Temperature -55-150

ORDERING INFORMATION

Part Number Package Packing Method Pack Quantity
2N3904 TO-92 Bulk 1000pcs/Bag
2N3904-TA TO-92 Tape 2000pcs/Box

MAXIMUM RATINGS (Ta=25Š unless otherwise noted)

Symbol Parameter Value Unit
VCBO Collector-Base Voltage 60 V
VCEO Collector-Emitter Voltage 40 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current -Continuous 0.2 A
PC Collector Power Dissipation 0.625 W
TJ Junction Temperature 150 Š
Tstg Storage Temperature -55-150 Š

Ta=25 Š unless otherwise specified

Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC=10µA, IE=0 60 V
Collector-emitter breakdown voltage V(BR)CEO IC= 1mA , IB=0 40 V
Emitter-base breakdown voltage V(BR)EBO IE= 10µA, IC=0 6 V
Collector cut-off current ICBO VCB=60V, IE=0 0.1 µA
Collector cut-off current ICEX VCE=30V, VEB(off)=3V 0.05 µA
Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 µA

DC current gain

hFE1 VCE=1V, IC=10mA 100 400
hFE2 VCE=1V, IC=50mA 60
hFE3 VCE=1V, IC=100mA 30
Collector-emitter saturation voltage VCE(sat) IC=50mA, IB=5mA 0.3 V
Base-emitter saturation voltage VBE(sat) IC=50mA, IB=5mA 0.95 V
Transition frequency fT VCE=20V,IC=10mA,f=100MHz 300 MHZ
Delay Time td

VCC=3V,VBE=0.5V,

IC=10mA,IB1=1mA

35 ns
Rise Time tr 35 ns
Storage Time ts

VCC=3V, IC=10mA

IB1=IB2=1mA

200 ns
Fall Time tf 50 ns

CLASSIFICATION OF hFE1

Rank O Y G
Ra nge 100-200 200-300 300-400



Typical Characteristics

2N3904 Tip Series Transistors Surface Mount High Cell Density Storage Temperature -55-150

2N3904 Tip Series Transistors Surface Mount High Cell Density Storage Temperature -55-150

2N3904 Tip Series Transistors Surface Mount High Cell Density Storage Temperature -55-150

2N3904 Tip Series Transistors Surface Mount High Cell Density Storage Temperature -55-150



Package Outline Dimensions

Symbol Dimensions In Millimeters Dimensions In Inches
Min Max Min Max
A 3.300 3.700 0.130 0.146
A1 1.100 1.400 0.043 0.055
b 0.380 0.550 0.015 0.022
c 0.360 0.510 0.014 0.020
D 4.300 4.700 0.169 0.185
D1 3.430 0.135
E 4.300 4.700 0.169 0.185
e 1.270 TYP 0.050 TYP
e1 2.440 2.640 0.096 0.104
L 14.100 14.500 0.555 0.571
0 1.600 0.063
h 0.000 0.380 0.000 0.015





SOT-89-3L Suggested Pad Layout

2N3904 Tip Series Transistors Surface Mount High Cell Density Storage Temperature -55-150


TO-92 Suggested Pad Layout
2N3904 Tip Series Transistors Surface Mount High Cell Density Storage Temperature -55-150


TO-92 7DSH DQG 5HHO

2N3904 Tip Series Transistors Surface Mount High Cell Density Storage Temperature -55-150

2N3904 Tip Series Transistors Surface Mount High Cell Density Storage Temperature -55-150

2N3904 Tip Series Transistors Surface Mount High Cell Density Storage Temperature -55-150

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