Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Shenzhen Hua Xuan Yang Electronics Co.,Ltd Our electronic components semiconductor is your most correct choice, because we are professional, honest, high quality, low price

Manufacturer from China
Active Member
6 Years
Home / Products / Tip Power Transistors /

SOT-89-3L B772 Tip Power Transistors Low Collector Emitter Saturation Voltage

Contact Now
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
City:shenzhen
Province/State:guangdong
Country/Region:china
Contact Person:MrDavid Lee
Contact Now

SOT-89-3L B772 Tip Power Transistors Low Collector Emitter Saturation Voltage

Ask Latest Price
Place of Origin :ShenZhen China
Brand Name :Hua Xuan Yang
Certification :RoHS、SGS
MOQ :1000-2000 PCS
Price :Negotiated
Packaging Details :Boxed
Delivery Time :1 - 2 Weeks
Payment Terms :L/C T/T Western Union
Supply Ability :18,000,000PCS / Per Day
Model Number :B772
Power Dissipation :1.5W
FEATURES :Low Collector-emitter Saturation Voltage
Collector Dissipation :1.25W
Usage :Electronic Components
Collector-Base Voltage :40V
Case :Tape/Tray/Reel
more
Contact Now

Add to Cart

Find Similar Videos
View Product Description

SOT-89-3L Plastic-Encapsulate Transistors B772 TRANSISTOR (NPN)

FEATURE

Low Speed switching

Symbol Parameter Value Unit
VCBO Collector-Base Voltage -40 V
VCEO Collector-Emitter Voltage -30 V
VEBO Emitter-Base Voltage -6 V
IC Collector Current -Continuous -3 A
PC Collector Dissipation 1.25 W
RӨJA Thermal Resistance from Junction to Ambient 100 ℃/W
TJ Junction Temperature 150
Tstg Storage Temperature -55~+150

AXIMUM RATINGS(Ta=25unless otherwise noted)

ELECTRICAL CHARACTERISTICS(Ta=25unless otherwise specified)

Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO Ic=-100μA, IE=0 -40 V
Collector-emitter breakdown voltage V(BR)CEO IC=-10mA, IB=0 -30 V
Emitter-base breakdown voltage V(BR)EBO IE=-100 μA,IC=0 -6 V
Collector cut-off current ICBO VCB=-40 V, IE=0 -1 μA
Collector cut-off current ICEO VCE=-30 V IB=0 -10 μA
Emitter cut-off current IEBO VEB=-6V,IC=0 -1 μA

DC current gain

hFE(1) VCE=-2V,IC=-1A 60 400
hFE(2) VCE=-2V,IC=-100mA 32
Collector-emitter saturation voltage VCE(sat) IC=-2A,IB=-0.2A -0.5 V
Base-emitter saturation voltage VBE(sat) IC=-2A,IB=-0.2A -1.5 V

Transition frequency

fT

VCE=-5V,IC=-0.1A

f=10MHz

50

MHz



CLASSIFICATION OF hFE(1)

Rank R O Y GR
Range 60-120 100-200 160-320

200-400




Typical Characteristics



SOT-89-3L B772 Tip Power Transistors Low Collector Emitter Saturation Voltage

SOT-89-3L B772 Tip Power Transistors Low Collector Emitter Saturation Voltage

SOT-89-3L B772 Tip Power Transistors Low Collector Emitter Saturation Voltage

SOT-89-3L B772 Tip Power Transistors Low Collector Emitter Saturation Voltage

Package Outline Dimensions

Symbol Dimensions In Millimeters Dimensions In Inches
Min. Max. Min. Max.
A —— 1.800 —— 0.071
A1 0.020 0.100 0.001 0.004
A2 1.500 1.700 0.059 0.067
b 0.660 0.840 0.026 0.033
b1 2.900 3.100 0.114 0.122
c 0.230 0.350 0.009 0.014
D 6.300 6.700 0.248 0.264
E 6.700 7.300 0.264 0.287
E1 3.300 3.700 0.130 0.146
e 2.300(BSC) 0.091(BSC)
L 0.750 —— 0.030 ——
θ 10° 10°


SOT-89-3L B772 Tip Power Transistors Low Collector Emitter Saturation Voltage


SOT-89-3L Suggested Pad Layout

SOT-89-3L B772 Tip Power Transistors Low Collector Emitter Saturation Voltage

SOT-89-3L Tape and Reel
SOT-89-3L B772 Tip Power Transistors Low Collector Emitter Saturation Voltage
SOT-89-3L B772 Tip Power Transistors Low Collector Emitter Saturation Voltage
SOT-89-3L B772 Tip Power Transistors Low Collector Emitter Saturation Voltage


Inquiry Cart 0