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3DD13003 NPN Transistor Circuit , NPN Power Transistor Collector Emitter Voltage 400V

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Shenzhen Hua Xuan Yang Electronics Co.,Ltd
City:shenzhen
Province/State:guangdong
Country/Region:china
Contact Person:MrDavid Lee
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3DD13003 NPN Transistor Circuit , NPN Power Transistor Collector Emitter Voltage 400V

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Place of Origin :ShenZhen China
Brand Name :Hua Xuan Yang
Certification :RoHS、SGS
MOQ :1000-2000 PCS
Price :Negotiated
Packaging Details :Boxed
Delivery Time :1 - 2 Weeks
Payment Terms :L/C T/T Western Union
Supply Ability :18,000,000PCS / Per Day
Model Number :3DD13003
Collector-Base Voltage :700v
Collector-Emitter Voltage :400v
Collector Current -Continuous :1.5a
Product name :semiconductor triode type
Collector Power Dissipation :2w
Type :Triode Transistor
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TO-220-3L Plastic-Encapsulate Transistors 3DD13003 TRANSISTOR (NPN)

FEATURE

· power switching applications

MAXIMUM RATINGS (Ta =25 Š unless otherwise noted)

Symbol Parameter Value Unit
VCBO Collector-Base Voltage 700 V
VCEO Collector-Emitter Voltage 400 V
VEBO Emitter-Base Voltage 9 V
IC Collector Current -Continuous 1.5 A
PC Collector Power Dissipation 2 W
TJ Junction Temperature 150
Tstg Storage Temperature -55~150


ELECTRICAL CHARACTERISTICS

Ta=25 Š unless otherwise specified


Ta=25 Š unless otherwise specified

Parameter

Symbol

S ymbol

Test conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC =5mA, IE=0 700 V
Collector-emitter breakdown voltage V(BR)CEO IC=10mA, IB=0 400 V
Emitter-base breakdown voltage V(BR)EBO IE=2mA, IC=0 9 V
Collector cut-off current ICBO VCB=700V,IE=0 1 mA
Collector cut-off current ICEO VCE=400V,IB=0 0.5 mA
Emitter cut-off current IEBO VEB=9V, IC=0 1 mA

DC current gain

hFE1 VCE=5V, IC= 0.5 A 8 40
hFE2 VCE=5V, IC= 1.5A 5
Collector-emitter saturation voltage VCE(sat) IC=1A,IB=0.25A 0.6 V
Base-emitter saturation voltage VBE(sat) IC=1A,IB=0.25A 1.2 V
Transition frequency fT VCE=10V,Ic=100mA, f =1MHz 5 MHz
Fall time tf IC=1A, IB1=-IB2=0.2A, VCC=100V 0.5 µs
Storage time tS IC=250mA (UI9600) 2 4 μs

CLASSIFICATION OF hFE1

Range 8-10 10-15 15-20 20-25 25-30 30-35 35-40

CLASSIFICATION OF tS

Rank A1 A2 B1 B2
Range 2-2.5 (μs ) 2.5-3(μs ) 3-3.5(μs ) 3.5-4 (μs


TO-92 Package Outline Dimensions

Symbol Dimensions In Millimeters Dimensions In Inches
Min Max Min Max
A 4.470 4.670 0.176 0.184
A1 2.520 2.820 0.099 0.111
b 0.710 0.910 0.028 0.036
b1 1.170 1.370 0.046 0.054
c 0.310 0.530 0.012 0.021
c1 1.170 1.370 0.046 0.054
D 10.010 10.310 0.394 0.406
E 8.500 8.900 0.335 0.350
E1 12.060 12.460 0.475 0.491
e 2.540 TYP 0.100 TYP
e1 4.980 5.180 0.196 0.204
F 2.590 2.890 0.102 0.114
h 0.000 0.300 0.000 0.012
L 13.400 13.800 0.528 0.543
L1 3.560 3.960 0.140 0.156
Φ 3.735 3.935 0.147 0.155

3DD13003 NPN Transistor Circuit , NPN Power Transistor Collector Emitter Voltage 400V



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