Shenzhen Hua Xuan Yang Electronics Co.,Ltd

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A92 High Current NPN Transistor , High Power NPN Silicon Transistor

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Shenzhen Hua Xuan Yang Electronics Co.,Ltd
City:shenzhen
Province/State:guangdong
Country/Region:china
Contact Person:MrDavid Lee
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A92 High Current NPN Transistor , High Power NPN Silicon Transistor

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Place of Origin :ShenZhen China
Brand Name :Hua Xuan Yang
Certification :RoHS、SGS
MOQ :1000-2000 PCS
Price :Negotiated
Packaging Details :Boxed
Delivery Time :1 - 2 Weeks
Payment Terms :L/C T/T Western Union
Supply Ability :18,000,000PCS / Per Day
Model Number :A92
Collector-Base Voltage :-310V
Type :Triode Transistor
Case :Tape/Tray/Reel
Material :Silicon
Collector Current :-200 mA
Collector Power Dissipation :500mW
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SOT-89-3L Plastic-Encapsulate Transistors A92 TRANSISTOR (NPN)

FEATURE

Low Collector-Emitter Saturation Voltage

High Breakdown Voltage

Marking :A92

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol Parameter Value Unit
VCBO Collector-Base Voltage -310 V
VCEO Collector-Emitter Voltage -305 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current- Continuous -200 mA
ICM Collector Current -Pulsed -500 mA
PC Collector Power Dissipation 500 mW
RθJA Thermal Resistance from Junction to Ambient 250 ℃/W
Tj Junction Temperature 150
Tstg Storage Temperature -55~+150




ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC=-100µA,IE=0 -310 V
Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -305 V
Emitter-base breakdown voltage V(BR)EBO IE=-100µA,IC=0 -5 V

Collector cut-off current

ICBO VCB=-200V,IE=0 -0.25 µA

ICEO

VCE=-200V,IB=0 -0.25 µA
VCE=-300V,IB=0 -5 µA
Emitter cut-off current IEBO VEB=-5V,IC=0 -0.1 µA

DC current gain

hFE(1) VCE=-10V, IC=-1mA 60
hFE(2) VCE=-10V, IC=-10mA 100 300
hFE(3) VCE=-10V, IC=-80mA 60
Collector-emitter saturation voltage VCE(sat) IC=-20mA,IB=-2mA -0.2 V
Base-emitter saturation voltage VBE(sat) IC=-20mA,IB=-2mA -0.9 V
Transition frequency fT VCE=-20V,IC=-10mA,f=30MHz 50 MHz



Typical Characteristics

A92 High Current NPN Transistor , High Power NPN Silicon Transistor

A92 High Current NPN Transistor , High Power NPN Silicon Transistor

A92 High Current NPN Transistor , High Power NPN Silicon Transistor

A92 High Current NPN Transistor , High Power NPN Silicon Transistor



Package Outline Dimensions

Symbol Dimensions In Millimeters Dimensions In Inches
Min Max Min Max
A 1.400 1.600 0.055 0.063
b 0.320 0.520 0.013 0.020
b1 0.400 0.580 0.016 0.023
c 0.350 0.440 0.014 0.017
D 4.400 4.600 0.173 0.181
D1 1.550 REF. 0.061 REF.
E 2.300 2.600 0.091 0.102
E1 3.940 4.250 0.155 0.167
e 1.500 TYP. 0.060 TYP.
e1 3.000 TYP. 0.118 TYP.
L 0.900 1.200 0.035 0.047



SOT-89-3L Suggested Pad Layout

A92 High Current NPN Transistor , High Power NPN Silicon Transistor

SOT-89-3L Tape and Reel
A92 High Current NPN Transistor , High Power NPN Silicon Transistor
A92 High Current NPN Transistor , High Power NPN Silicon Transistor
A92 High Current NPN Transistor , High Power NPN Silicon Transistor


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