SOT-23 Plastic-Encapsulate Transistors MMBTA55 TRANSISTOR (NPN)
FEATURE
l Driver Transistors
Marking :2H
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
| Symbol | Parameter | Value | Unit |
| VCBO | Collector-Base Voltage | -60 | V |
| VCEO | Collector-Emitter Voltage | -60 | V |
| VEBO | Emitter-Base Voltage | -4 | V |
| IC | Collector Current | -500 | mA |
| PC | Collector Power Dissipation | 225 | mW |
| RΘJA | Thermal Resistance From Junction To Ambient | 556 | ℃/W |
| Tj | Junction Temperature | 150 | ℃ |
| Tstg | Storage Temperature | -55～+150 | ℃ |
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
| Parameter | Symbol | Test conditions | Min | Typ | Max | Unit |
| Collector-base breakdown voltage | V(BR)CBO | IC=-100µA, IE=0 | -60 | | | V |
| Collector-emitter breakdown voltage | V(BR)CEO | IC=-1mA, IB=0 | -60 | | | V |
| Emitter-base breakdown voltage | V(BR)EBO | IE=-100µA, IC=0 | -4 | | | V |
| Collector cut-off current | ICBO | VCB=-60V, IE=0 | | | -0.1 | µA |
| Collector cut-off current | ICEO | VCE=-60V, IB=0 | | | -0.1 | µA |
| DC current gain | hFE(1) | VCE=-1V, IC=-10mA | 100 | | 400 | |
| | hFE(2) | VCE=-1V, IC=-100mA | 100 | | | |
| Collector-emitter saturation voltage | VCE(sat) | IC=-100mA, IB=-10mA | | | -0.25 | V |
| Base-emitter voltage | VBE | VCE=-1V, IC=-100mA | | | -1.2 | V |
| Transition frequency | fT | VCE=-1V,IC=-100mA, f=100MHz | 50 | | | MHz |
Package Outline Dimensions
| Symbol | Dimensions In Millimeters | Dimensions In Inches |
| | Min | Max | Min | Max |
| A | 0.900 | 1.150 | 0.035 | 0.045 |
| A1 | 0.000 | 0.100 | 0.000 | 0.004 |
| A2 | 0.900 | 1.050 | 0.035 | 0.041 |
| b | 0.300 | 0.500 | 0.012 | 0.020 |
| c | 0.080 | 0.150 | 0.003 | 0.006 |
| D | 2.800 | 3.000 | 0.110 | 0.118 |
| E | 1.200 | 1.400 | 0.047 | 0.055 |
| E1 | 2.250 | 2.550 | 0.089 | 0.100 |
| e | 0.950 TYP | 0.037 TYP |
| e1 | 1.800 | 2.000 | 0.071 | 0.079 |
| L | 0.550 REF | 0.022 REF |
| L1 | 0.300 | 0.500 | 0.012 | 0.020 |
| θ | 0° | 8° | 0° | 8° |
