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SOT-89-3L Plastic-Encapsulate Transistors B772 TRANSISTOR (NPN)
Low speed switching
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol | Parameter | Value | Unit |
VCBO | Collector-Base Voltage | -40 | V |
VCEO | Collector-Emitter Voltage | -30 | V |
VEBO | Emitter-Base Voltage | -6 | V |
IC | Collector Current -Continuous | -3 | A |
PC | Collector Power Dissipation | 0.5 | W |
RӨJA | Thermal Resistance, Junction to Ambient | 250 | ℃/W |
Tj | Junction Temperature | 150 | ℃ |
Tstg | Storage Temperature | -55~150 | ℃ |
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter | Symbol | Test conditions | Min | Typ | Max | Unit |
Collector-base breakdown voltage | V(BR)CBO | IC=-100μA ,IE=0 | -40 | V | ||
Collector-emitter breakdown voltage | V(BR)CEO | IC= -10mA , IB=0 | -30 | V | ||
Emitter-base breakdown voltage | V(BR)EBO | IE= -100μA,IC=0 | -6 | V | ||
Collector cut-off current | ICBO | VCB= -40V, IE=0 | -1 | μA | ||
Collector cut-off current | ICEO | VCE=-30V, IB=0 | -10 | μA | ||
Emitter cut-off current | IEBO | VEB=-6V, IC=0 | -1 | μA | ||
DC current gain | hFE | VCE= -2V, IC= -1A | 60 | 400 | ||
Collector-emitter saturation voltage | VCE(sat) | IC=-2A, IB= -0.2A | -0.5 | V | ||
Base-emitter saturation voltage | VBE(sat) | IC=-2A, IB= -0.2A | -1.5 | V | ||
Transition frequency |
fT | VCE= -5V, IC=-0.1A f =10MHz |
50 |
MHz |
Typical Characteristics
Package Outline Dimensions
Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
Min | Max | Min | Max | |
A | 1.400 | 1.600 | 0.055 | 0.063 |
b | 0.320 | 0.520 | 0.013 | 0.020 |
b1 | 0.400 | 0.580 | 0.016 | 0.023 |
c | 0.350 | 0.440 | 0.014 | 0.017 |
D | 4.400 | 4.600 | 0.173 | 0.181 |
D1 | 1.550 REF. | 0.061 REF. | ||
E | 2.300 | 2.600 | 0.091 | 0.102 |
E1 | 3.940 | 4.250 | 0.155 | 0.167 |
e | 1.500 TYP. | 0.060 TYP. | ||
e1 | 3.000 TYP. | 0.118 TYP. | ||
L | 0.900 | 1.200 | 0.035 | 0.047 |
CLASSIFICATION OF hFE
Rank | R | O | Y | GR |
Range | 60-120 | 100-200 | 160-320 | 200-400 |
Typical Characteristics