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SOT-89-3L A44 Silicon Power Transistor NPN Collector Base Voltage 400V

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Shenzhen Hua Xuan Yang Electronics Co.,Ltd
City:shenzhen
Province/State:guangdong
Country/Region:china
Contact Person:MrDavid Lee
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SOT-89-3L A44 Silicon Power Transistor NPN Collector Base Voltage 400V

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Place of Origin :ShenZhen China
Brand Name :Hua Xuan Yang
Certification :RoHS、SGS
MOQ :1000-2000 PCS
Price :Negotiated
Packaging Details :Boxed
Delivery Time :1 - 2 Weeks
Payment Terms :L/C T/T Western Union
Supply Ability :18,000,000PCS / Per Day
Model Number :SOT-89-3L A44
Collector-Base Voltage :400V
Junction Temperature :150 ℃
Tstg :-55~+150℃
Material :Silicon
Collector Current :600 mA
Collector Power Dissipation :500mW
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SOT-89-3L Plastic-Encapsulate Transistors A44 TRANSISTOR (NPN)

FEATURE

Low Collector-Emitter Saturation Voltage

High Breakdown Voltage

Marking :A44

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol Parameter Value Unit
VCBO Collector-Base Voltage 400 V
VCEO Collector-Emitter Voltage 400 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current -Continuous 200 mA
ICM Collector Current -Pulsed 300 mA
PC Collector Power Dissipation 500 mW
RθJA Thermal Resistance from Junction to Ambient 250 ℃/W
Tj Junction Temperature 150
Tstg Storage Temperature -55~+150




ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter Symbol T est conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC=100µA,IE=0 400 V
Collector-emitter breakdown voltage V(BR)CEO* IC=1mA,IB=0 400 V
Emitter-base breakdown voltage V(BR)EBO IE=10µA,IC=0 6 V
Collector cut-off current ICBO VCB=400V,IE=0 0.1 µA
Emitter cut-off current IEBO VEB=4V,IC=0 0.1 µA

DC current gain

hFE(1)* VCE=10V, IC=1mA 40
hFE(2)* VCE=10V, IC=10mA 50 200
hFE(3)* VCE=10V, IC=50mA 45
hFE(4)* VCE=10V, IC=100mA 40

Collector-emitter saturation voltage

VCE(sat)*

IC=1mA,IB=0.1mA 0.4 V
IC=10mA,IB=1mA 0.5 V
IC=50mA,IB=5mA 0.75 V
Base-emitter saturation voltage VBE(sat)* IC=10mA,IB=1mA 0.75 V
Collector output capacitance Cob VCB=20V, IE=0, f=1MHz 7 pF
Emitter input capacitance Cib VBE=0.5V, IC=0, f=1MHz 130 pF



Typical Characteristics

SOT-89-3L A44 Silicon Power Transistor NPN Collector Base Voltage 400V

SOT-89-3L A44 Silicon Power Transistor NPN Collector Base Voltage 400V

SOT-89-3L A44 Silicon Power Transistor NPN Collector Base Voltage 400V

SOT-89-3L A44 Silicon Power Transistor NPN Collector Base Voltage 400V



Package Outline Dimensions

Symbol Dimensions In Millimeters Dimensions In Inches
Min Max Min Max
A 1.400 1.600 0.055 0.063
b 0.320 0.520 0.013 0.020
b1 0.400 0.580 0.016 0.023
c 0.350 0.440 0.014 0.017
D 4.400 4.600 0.173 0.181
D1 1.550 REF. 0.061 REF.
E 2.300 2.600 0.091 0.102
E1 3.940 4.250 0.155 0.167
e 1.500 TYP. 0.060 TYP.
e1 3.000 TYP. 0.118 TYP.
L 0.900 1.200 0.035 0.047



SOT-89-3L Suggested Pad Layout

SOT-89-3L A44 Silicon Power Transistor NPN Collector Base Voltage 400V

SOT-89-3L Tape and Reel
SOT-89-3L A44 Silicon Power Transistor NPN Collector Base Voltage 400V
SOT-89-3L A44 Silicon Power Transistor NPN Collector Base Voltage 400V
SOT-89-3L A44 Silicon Power Transistor NPN Collector Base Voltage 400V


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