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FMMT491 High Voltage NPN Power Transistor Low Equivalent On Resistance

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Shenzhen Hua Xuan Yang Electronics Co.,Ltd
City:shenzhen
Province/State:guangdong
Country/Region:china
Contact Person:MrDavid Lee
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FMMT491 High Voltage NPN Power Transistor Low Equivalent On Resistance

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Place of Origin :ShenZhen China
Brand Name :Hua Xuan Yang
Certification :RoHS、SGS
MOQ :1000-2000 PCS
Price :Negotiated
Packaging Details :Boxed
Delivery Time :1 - 2 Weeks
Payment Terms :L/C T/T Western Union
Supply Ability :18,000,000PCS / Per Day
Model Number :FMMT491
Type :Silicon Power Transistor
FEATURE :Low equivalent on-resistance
Collector-Emitter Voltage :60v
Storage Temperature :-55~+150℃
Collector Power Dissipation :250mW
Peak Pulse Current :2A
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SOT-23 Plastic-Encapsulate Transistors FMMT491 TRANSISTOR (NPN)

FEATURE

Low equivalent on-resistance

FMMT491 High Voltage NPN Power Transistor Low Equivalent On Resistance

Marking :491

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

SymbolParameterValueUnit
VCBOCollector-Base Voltage80V
VCEOCollector-Emitter Voltage60V
VEBOEmitter-Base Voltage5V
ICCollector Current1A
ICMPeak Pulse Current2A
PCCollector Power Dissipation250mW
RΘJAThermal Resistance From Junction To Ambient500℃/W
TjJunction Temperature150
TstgStorage Temperature-55~+150




ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

ParameterSymbolTest conditionsMinTypMaxUnit
Collector-base breakdown voltageV(BR)CBOIC=100μA,IE=080 V
Collector-emitter breakdown voltageV(BR)CEO1IC=10mA,IB=060 V
Emitter-base breakdown voltageV(BR)EBOIE=100μA,IC=05 V
Collector cut-off currentICBOVCB=60V,IE=0 0.1μA
Emitter cut-off currentIEBOVEB=4V,IC=0 0.1μA



DC current gain

hFE(1)VCE=5V,IC=1mA100
hFE(2) 1VCE=5V,IC=500mA100 300
hFE(3) 1VCE=5V,IC=1A80
hFE(4) 1VCE=5V,IC=2A30

Collector-emitter saturation voltage

VCE(sat)1 1IC=500mA,IB=50mA 0.25V
VCE(sat)2 1IC=1A,IB=100mA 0.5V
Base-emitter saturation voltageVBE(sat) 1IC=1A,IB=100mA 1.1V
Base-emitter voltage

1

VBE

VCE=5V,IC=1A 1V
Transition frequencyfTVCE=10V,IC=50mA,,f=100MHz150 MHz
Collector output capacitanceCobVCB=10V,f=1MHz 10pF



Measured under pulsed conditions, Pulse width=300μs, Duty cycle≤2%.



Typical Characterisitics


FMMT491 High Voltage NPN Power Transistor Low Equivalent On Resistance
FMMT491 High Voltage NPN Power Transistor Low Equivalent On Resistance
FMMT491 High Voltage NPN Power Transistor Low Equivalent On Resistance
FMMT491 High Voltage NPN Power Transistor Low Equivalent On Resistance






Package Outline Dimensions

SymbolDimensions In MillimetersDimensions In Inches
MinMaxMinMax
A0.9001.1500.0350.045
A10.0000.1000.0000.004
A20.9001.0500.0350.041
b0.3000.5000.0120.020
c0.0800.1500.0030.006
D2.8003.0000.1100.118
E1.2001.4000.0470.055
E12.2502.5500.0890.100
e0.950 TYP0.037 TYP
e11.8002.0000.0710.079
L0.550 REF0.022 REF
L10.3000.5000.0120.020
θ



FMMT491 High Voltage NPN Power Transistor Low Equivalent On Resistance
FMMT491 High Voltage NPN Power Transistor Low Equivalent On Resistance
FMMT491 High Voltage NPN Power Transistor Low Equivalent On Resistance

































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