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Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Shenzhen Hua Xuan Yang Electronics Co.,Ltd Our electronic components semiconductor is your most correct choice, because we are professional, honest, high quality, low price

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1SS184 High Speed Switching Diode Low Forward Voltage PD 150mw

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Shenzhen Hua Xuan Yang Electronics Co.,Ltd
City:shenzhen
Province/State:guangdong
Country/Region:china
Contact Person:MrDavid Lee
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China 1SS184 High Speed Switching Diode Low Forward Voltage PD 150mw wholesale
  • China 1SS184 High Speed Switching Diode Low Forward Voltage PD 150mw wholesale
  • China 1SS184 High Speed Switching Diode Low Forward Voltage PD 150mw wholesale

1SS184 High Speed Switching Diode Low Forward Voltage PD 150mw
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Place of Origin :ShenZhen China
Brand Name :Hua Xuan Yang
Certification :RoHS、SGS
MOQ :1000-2000 PCS
Price :Negotiated
Packaging Details :Boxed
Delivery Time :1 - 2 Weeks
Payment Terms :L/C T/T Western Union
Supply Ability :18,000,000PCS / Per Day
Model Number :1SS184
Product ID :Product ID
Feature :Low forward voltage
Type :Switching Diode
PD :150mw
RθJA :833℃/W
TJ :150℃
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View Product Description

1SS184 Switching Diode

FEATURES

  • Low forward voltage

  • Fast reverse recovery time

Solid dot = Green molding compound device,if none,the normal device.

Maximum Ratings @Ta=25℃

Parameter Symbol Limit Unit
Non-Repetitive Peak Reverse Voltage VRM 85 V
DC Blocking Voltage VR 80 V
Forward Continuous Current IFM 300 mA
Average Rectified Output Current IO 100 mA
Non-Repetitive Peak Forward Surge Current @t=8.3ms IFSM 2.0 A
Power Dissipation PD 150 mW
Thermal Resistance from Junction to Ambient RθJA 833 ℃/W
Junction Temperature TJ 150 ℃
Storage Temperature Range TSTG -55~+150 ℃

Electrical Characteristics @Ta=25℃

Parameter Symbol Min Typ Max Unit Conditions
Reverse breakdown voltage V(BR) 80 V IR=100μA

Forward voltage

 VF1 0.60 V IF=1mA
VF2 0.72 V IF=10mA
VF3 0.9 1.2 V IF=100mA

Reverse current

 IR1 0.1 uA VR=30V
IR2 0.5 uA VR=80V
Capacitance between terminals CT 0.9 3.0 pF VR=0,f=1MHz
Reverse recovery time t rr 1.6 4.0 ns IF=IR=10mA,Irr=0.1×IR

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