Shenzhen Hua Xuan Yang Electronics Co.,Ltd

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BAV16W/1N4148W Dual Switching Diode Fast Switching RθJA 250mW

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Shenzhen Hua Xuan Yang Electronics Co.,Ltd
City:shenzhen
Province/State:guangdong
Country/Region:china
Contact Person:MrDavid Lee
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BAV16W/1N4148W Dual Switching Diode Fast Switching RθJA 250mW

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Place of Origin :ShenZhen China
Brand Name :Hua Xuan Yang
Certification :RoHS、SGS
MOQ :1000-2000 PCS
Price :Negotiated
Packaging Details :Boxed
Delivery Time :1 - 2 Weeks
Payment Terms :L/C T/T Western Union
Supply Ability :18,000,000PCS / Per Day
Model Number :BAV16W
Product ID :BAV16W/1N4148W
Feature :Fast reverse recovery time
Type :Switching Diodesod
VR(RMS) :71v
RθJA :250mW
TSTG :-55~+150
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1SS184 Switching Diode BAV16W/1N4148W FAST SWITCHING DIODE

FEATURES

Ÿ Fast Switching Speed

Ÿ Surface Mount Package Ideally Suited for Automatic Insertion

Ÿ For General Purpose Switching Applications

Ÿ High Conductance

MARKING: T6,T4

1N4148W BAV16W

T4

T4

T6

T6

The marking bar indicates the cathode

Solid dot = Green molding compound device,if none,the normal device.

Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25

Parameter Symbol Limit Unit
Non-Repetitive Peak Reverse Voltage VRM 100 V

Peak Repetitive Peak Reverse Voltage Working Peak Reverse Voltage

DC Blocking Voltage

VRRM VRWM

VR

100

V

RMS Reverse Voltage VR(RMS) 71 V
Forward Continuous Current IFM 300 mA
Average Rectified Output Current IO 150 mA
Non-Repetitive Peak Forward Surge Current @t=8.3ms IFSM 2.0 A
Power Dissipation 1N4148W BAV16W

Pd

350

400

mW

Thermal Resistance from Junction to Ambient(Note 1) RθJA 250

℃/W

Junction Temperature Tj 150
Storage Temperature TSTG -55~+150

Note 1:Device mounted on 1''x1'' FR4 PCB,1oz single-side copper.

ELECTRICAL CHARACTERISTICS

Electrical Ratings @Ta=25

Parameter Symbol Min Typ Max Unit Conditions

Forward voltage

VF1 0.715 V IF=1mA
VF2 0.855 V IF=10mA
VF3 1.0 V IF=50mA
VF4 1.25 V IF=150mA

Reverse current

IR1 1 μA VR=75V
IR2 25 nA VR=20V
Capacitance between terminals CT 2 pF VR=0V,f=1MHz

Reverse recovery time

trr

4

ns

IF=IR=10mA

Irr=0.1XIR,RL=100Ω

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