Shenzhen Hua Xuan Yang Electronics Co.,Ltd

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RS3A THRU RS3M Dual Switching Diode Forward Current - 3.0 Amperes

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Shenzhen Hua Xuan Yang Electronics Co.,Ltd
City:shenzhen
Province/State:guangdong
Country/Region:china
Contact Person:MrDavid Lee
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RS3A THRU RS3M Dual Switching Diode Forward Current - 3.0 Amperes

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Place of Origin :ShenZhen China
Brand Name :Hua Xuan Yang
Certification :RoHS、SGS
MOQ :1000-2000 PCS
Price :Negotiated
Packaging Details :Boxed
Delivery Time :1 - 2 Weeks
Payment Terms :L/C T/T Western Union
Supply Ability :18,000,000PCS / Per Day
Model Number :RS3A THRU RS3M
Weight :0.003 ounce, 0.093 grams
Feature :High forward surge current capability
Type :General Purpose Silicon Rectifier
IFSM :100.0Amps
VF :1.3Volts
I(AV) :3.0Amps
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RS3A THRU RS3M SURFACE MOUNT everse Voltage - 50 to 1000 Volts Forward Current - 3.0 Amperes​

FEATURES
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
For surface mounted applications Low reverse leakage
Built-in strain relief,ideal for automated placement
High forward surge current capability
High temperature soldering guaranteed:
250 C/10 seconds at terminals Glass passivated chip junction

MECHANICAL DATA

Case: JEDEC DO-214AA molded plastic body over passivated chip

Terminals: Solder plated, solderable per MIL-STD-750, Method 2026

Polarity: Color band denotes cathode end

Mounting Position: Any

Weight:0.003 ounce, 0.093 grams

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

MDD Catalog Number SYMBOLS RS3A RS3B RS3D RS3G RS3J RS3K RS3M UNITS
Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 VOLTS
Maximum RMS voltage VRMS 35 70 140 280 420 560 700 VOLTS
Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 VOLTS

Maximum average forward rectified current

at TL=75 C

I(AV) 3.0 Amps

Peak forward surge current

8.3ms single half sine-wave superimposed on rated load (JEDEC Method)

IFSM

100.0

Amps

Maximum instantaneous forward voltage at 3.0A VF 1.3 Volts

Maximum DC reverse current TA=25 C

at rated DC blocking voltage TA=100 C

IR

5.0

100.0

mA
Maximum reverse recovery time (NOTE 1) trr 150 250 500 ns
Typical junction capacitance (NOTE 2) CJ 60.0 pF
Typical thermal resistance (NOTE 3) RqJA 50.0 C/W
Operating junction and storage temperature range TJ,TSTG -50 to +150 C


Note:

1. Reverse recovery condition IF=0.5A,IR=1.0A,Irr=0.25A

2. Measured at 1MHz and applied reverse voltage of 4.0V D.C.

3. Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted

RATINGS AND CHARACTERISTIC CURVES RS3A THRU RS3M

RS3A THRU RS3M Dual Switching Diode Forward Current - 3.0 Amperes

RS3A THRU RS3M Dual Switching Diode Forward Current - 3.0 Amperes

RS3A THRU RS3M Dual Switching Diode Forward Current - 3.0 Amperes

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