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HXY4406A VDS 30V Mos Field Effect Transistor ID 13A RDS(ON) < 11.5mΩ

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Shenzhen Hua Xuan Yang Electronics Co.,Ltd
City:shenzhen
Province/State:guangdong
Country/Region:china
Contact Person:MrDavid Lee
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HXY4406A VDS 30V Mos Field Effect Transistor ID 13A RDS(ON) < 11.5mΩ

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Place of Origin :ShenZhen China
Brand Name :Hua Xuan Yang
Certification :RoHS、SGS
MOQ :1000-2000 PCS
Price :Negotiated
Packaging Details :Boxed
Delivery Time :1 - 2 Weeks
Payment Terms :L/C T/T Western Union
Supply Ability :18,000,000PCS / Per Day
Model Number :HXY4406A
Product name :Mosfet Power Transistor
VDS :30v
ID (at VGS=10V) :13A
RDS(ON) (at VGS=10V) :< 11.5mΩ
Type :mosfet transistor
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Product Summary

VDS 30V
ID (at VGS=10V) 13A
RDS(ON) (at VGS=10V) < 11.5mΩ
RDS(ON) (at VGS = 4.5V) < 15.5mΩ

General Description

The HXY4406A uses advanced trench technology toprovide excellent RDS(ON) with low gate charge.This device is suitable for high side switch in SMPS andgeneral purpose applications.

HXY4406A VDS 30V Mos Field Effect Transistor ID 13A RDS(ON) < 11.5mΩ

Electrical Characteristics (T =25°C unless otherwise noted)

HXY4406A VDS 30V Mos Field Effect Transistor ID 13A RDS(ON) < 11.5mΩ

A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The

value in any given application depends on the user's specific board design.

B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.

C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep

initialT =25°C.

D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with

2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.

G. The spike duty cycle 5% max, limited by junction temperature TJ(MAX)=125°C.

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

HXY4406A VDS 30V Mos Field Effect Transistor ID 13A RDS(ON) < 11.5mΩHXY4406A VDS 30V Mos Field Effect Transistor ID 13A RDS(ON) < 11.5mΩ
HXY4406A VDS 30V Mos Field Effect Transistor ID 13A RDS(ON) < 11.5mΩHXY4406A VDS 30V Mos Field Effect Transistor ID 13A RDS(ON) < 11.5mΩHXY4406A VDS 30V Mos Field Effect Transistor ID 13A RDS(ON) < 11.5mΩ

HXY4406A VDS 30V Mos Field Effect Transistor ID 13A RDS(ON) < 11.5mΩHXY4406A VDS 30V Mos Field Effect Transistor ID 13A RDS(ON) < 11.5mΩ

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