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HXY4466 30V Mos Field Effect Transistor N Channel VGS 10V Low Noise

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Shenzhen Hua Xuan Yang Electronics Co.,Ltd
City:shenzhen
Province/State:guangdong
Country/Region:china
Contact Person:MrDavid Lee
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HXY4466 30V Mos Field Effect Transistor N Channel VGS 10V Low Noise

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Place of Origin :ShenZhen China
Brand Name :Hua Xuan Yang
Certification :RoHS、SGS
MOQ :1000-2000 PCS
Price :Negotiated
Packaging Details :Boxed
Delivery Time :1 - 2 Weeks
Payment Terms :L/C T/T Western Union
Supply Ability :18,000,000PCS / Per Day
Model Number :HXY4466
Product name :Mosfet Power Transistor
VDS :30V
RDS(ON) < 35mΩ :(VGS = 4.5V)
RDS(ON) < 23mΩ :(VGS = 10V)
Type :mosfet transistor
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View Product Description
60V N-Channel AlphaSGT HXY4264

Product Summary

VDS 30V
I = 10A VGS = 10V)
RDS(ON) < 23mΩ (VGS = 10V)
RDS(ON) < 35mΩ (VGS = 4.5V)


General Description

The HXY4466 uses advanced trench technology to

provide excellent RDS(ON) and low gate charge. This

device is suitable for use as a load switch or in PWM

applications. The source leads are separated to allow

a Kelvin connection to the source, which may be

used to bypass the source inductance.

HXY4466 30V Mos Field Effect Transistor N Channel VGS 10V Low Noise

Electrical Characteristics (T =25°C unless otherwise noted)

HXY4466 30V Mos Field Effect Transistor N Channel VGS 10V Low Noise

A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The

value in any given application depends on the user's specific board design.

B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.

C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep

initialT =25°C.

D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with

2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.

G. The spike duty cycle 5% max, limited by junction temperature TJ(MAX)=125°C.

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

HXY4466 30V Mos Field Effect Transistor N Channel VGS 10V Low NoiseHXY4466 30V Mos Field Effect Transistor N Channel VGS 10V Low NoiseHXY4466 30V Mos Field Effect Transistor N Channel VGS 10V Low NoiseHXY4466 30V Mos Field Effect Transistor N Channel VGS 10V Low NoiseHXY4466 30V Mos Field Effect Transistor N Channel VGS 10V Low NoiseHXY4466 30V Mos Field Effect Transistor N Channel VGS 10V Low NoiseHXY4466 30V Mos Field Effect Transistor N Channel VGS 10V Low Noise

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