Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Shenzhen Hua Xuan Yang Electronics Co.,Ltd Our electronic components semiconductor is your most correct choice, because we are professional, honest, high quality, low price

Manufacturer from China
Active Member
7 Years
Home / Products / Mos Field Effect Transistor /

HXY2312 N Channel 20-V(D-S) Mos Field Effect Transistor SOT-23 Plastic Encapsulate

Contact Now
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
City:shenzhen
Province/State:guangdong
Country/Region:china
Contact Person:MrDavid Lee
Contact Now

HXY2312 N Channel 20-V(D-S) Mos Field Effect Transistor SOT-23 Plastic Encapsulate

Ask Latest Price
Place of Origin :ShenZhen China
Brand Name :Hua Xuan Yang
Certification :RoHS、SGS
MOQ :1000-2000 PCS
Price :Negotiated
Packaging Details :Boxed
Delivery Time :1 - 2 Weeks
Payment Terms :L/C T/T Western Union
Supply Ability :18,000,000PCS / Per Day
Model Number :HXY2312
Product name :Mosfet Power Transistor
Junction temperature :150℃
Material :Silicon
Case :Tape/Tray/Reel
Type :mosfet transistor
more
Contact Now

Add to Cart

Find Similar Videos
View Product Description
SOT-23 Plastic-Encapsulate MOSFETS HXY2312 N-Channel 20-V(D-S) MOSFET

Product Summary

ID= 6.0 A VDSS=20v
RDS(on) <32 mΩ VGS =4.5V
RDS(on) <40 mΩ VGS =2.5V
FEATURE
TrenchFET Power MOSFET
APPLICATION
DC/DC Converters
Load Switching for Portable Applications
Maximum ratings (Ta=25℃ unless otherwise noted)
HXY2312 N Channel 20-V(D-S) Mos Field Effect Transistor SOT-23 Plastic Encapsulate
T =25 a ℃ unless otherwise specified
HXY2312 N Channel 20-V(D-S) Mos Field Effect Transistor SOT-23 Plastic Encapsulate
HXY2312 N Channel 20-V(D-S) Mos Field Effect Transistor SOT-23 Plastic EncapsulateHXY2312 N Channel 20-V(D-S) Mos Field Effect Transistor SOT-23 Plastic Encapsulate
Inquiry Cart 0