Shenzhen Hua Xuan Yang Electronics Co.,Ltd

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50N06P/T 60V Mos Field Effect Transistor Silicon Material Junction Temperature 150℃

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Shenzhen Hua Xuan Yang Electronics Co.,Ltd
City:shenzhen
Province/State:guangdong
Country/Region:china
Contact Person:MrDavid Lee
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50N06P/T 60V Mos Field Effect Transistor Silicon Material Junction Temperature 150℃

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Place of Origin :ShenZhen China
Brand Name :Hua Xuan Yang
Certification :RoHS、SGS
MOQ :1000-2000 PCS
Price :Negotiated
Packaging Details :Boxed
Delivery Time :1 - 2 Weeks
Payment Terms :L/C T/T Western Union
Supply Ability :18,000,000PCS / Per Day
Model Number :50N06P/T
Product name :Mosfet Power Transistor
Junction temperature :150℃
Material :Silicon
Case :Tape/Tray/Reel
Type :mosfet transistor
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50N06P/T 200V N-Channel Enhancement Mode MOSFET

Product Summary

The 18N20X uses advanced Plane technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.
50N06P/T 60V Mos Field Effect Transistor Silicon Material Junction Temperature 150℃50N06P/T 60V Mos Field Effect Transistor Silicon Material Junction Temperature 150℃50N06P/T 60V Mos Field Effect Transistor Silicon Material Junction Temperature 150℃50N06P/T 60V Mos Field Effect Transistor Silicon Material Junction Temperature 150℃50N06P/T 60V Mos Field Effect Transistor Silicon Material Junction Temperature 150℃
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