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TIP32/32A/32B/32C High Frequency Semiconductor Triode Collector Power Dissipation 2W

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Shenzhen Hua Xuan Yang Electronics Co.,Ltd
City:shenzhen
Province/State:guangdong
Country/Region:china
Contact Person:MrDavid Lee
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TIP32/32A/32B/32C High Frequency Semiconductor Triode Collector Power Dissipation 2W

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Place of Origin :ShenZhen China
Brand Name :Hua Xuan Yang
Certification :RoHS、SGS
MOQ :1000-2000 PCS
Price :Negotiated
Packaging Details :Boxed
Delivery Time :1 - 2 Weeks
Payment Terms :L/C T/T Western Union
Supply Ability :18,000,000PCS / Per Day
Model Number :TIP32/32A/32B/32C
Product ID :TIP32/32A/32B/32C
Collector Power Dissipation :2w
Type :Semiconductor Triode
Feature :High Frequency
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View Product Description

TO-220-3L Plastic-Encapsulate Transistors

TIP32/32A/32B/32C

FEATURE
Medium Power Linear Switching Applications

MAXIMUM RATINGS (Ta=25unless otherwise noted)

Symbol Parameter TIP31 TIP31A TIP31B TIP31C Unit
VCBO Collector-Base Voltage 40 60 80 100 V
VCEO Collector-Emitter Voltage 40 60 80 100 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current 3 A
PC Collector Power Dissipation 2 W
RθJA Thermal Resistance from Junction to Ambient 62.5
Tj Junction Temperature 150
Tstg Storage Temperature -55~+150

ELECTRICAL CHARACTERISTICS (Ta=25unless other wise specified)

Parameter Symbol Test conditions Min M ax Unit
Collector-base breakdown voltage TIP31 TIP31A TIP31B TIP31C

V(BR)CBO

IC= 1mA, IE=0

40

60

80

100

V

Collector-emitter breakdown voltage * TIP31 TIP31A TIP31B TIP31C

VCEO(sus)

IC= 30mA, IB=0

40

60

80

100

V

Emitter-base breakdown voltage V(BR)EBO IE= 1mA, IC=0 5 V
Collector cut-off current

TIP31 TIP31A TIP31B

TIP31C

ICBO

VCB=40V, IE=0 VCB=60V, IE=0 VCB=80V, IE=0 VCB=100V, IE=0

200

μA

Collector cut-off current TIP31/31A TIP31B/31C ICEO VCE= 30V, IB= 0 VCE= 60V, IB= 0

0.3

mA

Emitter cut-off current IEBO VEB=5V, IC=0 1 mA

DC current gain

hFE(1) VCE= 4V, IC= 1A 25
hFE(2) VCE=4 V, IC= 3A 15 75
Collector-emitter saturation voltage VCE(sat) IC=3A, IB=0.375A 1.2 V
Base-emitter voltage VBE(on) VCE= 4V, IC=3A 1.8 V
Transition frequency fT VCE=10V , IC=0.5A 3 MHz

* Pulse Test: PW≤300µs, Duty Cycle≤2%.

Typical Characteristics TIP31/31A/31B/31C

TIP32/32A/32B/32C High Frequency Semiconductor Triode Collector Power Dissipation 2W

TIP32/32A/32B/32C High Frequency Semiconductor Triode Collector Power Dissipation 2W

TIP32/32A/32B/32C High Frequency Semiconductor Triode Collector Power Dissipation 2W

TO-126 Package Outline Dimensions

Symbol Dimensions In Millimeters Dimensions In Inches
Min Max Min Max
A 4.470 4.670 0.176 0.184
A1 2.520 2.820 0.099 0.111
b 0.710 0.910 0.028 0.036
b1 1.170 1.370 0.046 0.054
c 0.310 0.530 0.012 0.021
c1 1.170 1.370 0.046 0.054
D 10.010 10.310 0.394 0.406
E 8.500 8.900 0.335 0.350
E1 12.060 12.460 0.475 0.491
e 2.540 TYP 0.100 TYP
e1 4.980 5.180 0.196 0.204
F 2.590 2.890 0.102 0.114
h 0.000 0.300 0.000 0.012
L 13.400 13.800 0.528 0.543
L1 3.560 3.960 0.140 0.156
Φ 3.735 3.935 0.147 0.155

TIP32/32A/32B/32C High Frequency Semiconductor Triode Collector Power Dissipation 2W

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