Shenzhen Hua Xuan Yang Electronics Co.,Ltd

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HXY4441 30V P-Channel MOSFET

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Shenzhen Hua Xuan Yang Electronics Co.,Ltd
City:shenzhen
Province/State:guangdong
Country/Region:china
Contact Person:MrDavid Lee
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HXY4441 30V P-Channel MOSFET

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Brand Name :Hua Xuan Yang
Model Number :HXY4441
Certification :RoHS、SGS
Place of Origin :ShenZhen China
MOQ :1000-2000 PCS
Price :Negotiated
Payment Terms :L/C T/T Western Union
Supply Ability :18,000,000PCS / Per Day
Delivery Time :1 - 2 Weeks
Packaging Details :Boxed
Product name :Mosfet Power Transistor
VDS :30V
APPLICATION :High Frequency Circuits
FEATURE :Low Gate Charge
VGS :30V
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HXY4441 30V P-Channel MOSFET

Description

HXY4441 30V P-Channel MOSFETHXY4441 30V P-Channel MOSFETHXY4441 30V P-Channel MOSFET
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
HXY4441 30V P-Channel MOSFETHXY4441 30V P-Channel MOSFETHXY4441 30V P-Channel MOSFETHXY4441 30V P-Channel MOSFET

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