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Enhancement Mode N Channel Mosfet Power Transistor Low Voltage 100V

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Enhancement Mode N Channel Mosfet Power Transistor Low Voltage 100V

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Brand Name :Hua Xuan Yang
Model Number :AP3N10BI
Certification :RoHS、SGS
Place of Origin :ShenZhen China
MOQ :Negotiation
Price :Negotiated
Payment Terms :L/C T/T Western Union
Supply Ability :18,000,000PCS / Per Day
Delivery Time :1 - 2 Weeks
Packaging Details :Boxed
Product name :N Channel Mosfet Power
Model :AP3N10BI
Marking :MA4
Pack :SOT23
VDSDrain-Source Voltage :100V
VGSGate-Sou rce Voltage :±20A
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Enhancement Mode N Channel Mosfet Power Transistor Low Voltage 100V

N Channel Mosfet Power Working and Characteristics

The construction of the power MOSFET is in V-configurations, as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power MOSFET is cut to penetrate from the device surface is almost to the N+ substrate to the N+, P, and N – layers. The N+ layer is the heavily doped layer with a low resistive material and the N- layer is a lightly doped layer with the high resistance region.

N Channel Mosfet Power Features

VDS= 100V I D=2.8 A

RDS(ON)< 320mΩ @ VGS=10V

N Channel Mosfet Power Application

Battery protection

Uninterruptible power supply

Package Marking and Ordering Information

Product ID Pack Marking Qty(PCS)
AP3N10BI SOT23 MA4 3000

Absolute Maximum Ratings (TC=25 unless otherwise specified)

Symbol Parameter Rating Units
VDS Drain-Source Voltage 100 V
VGS Gate-Sou rce Voltage ±20 V
ID@TA=25℃ Continuous Drain Current, V GS @ 10V 1 2.8 A
ID@TA=70℃ Continuous Drain Current, V GS @ 10V 1 1 A
IDM Pulsed Drain Current2 5 A
PD@TA=25 ℃ Total Power Dissipation3 1 W
TSTG Storage Temperature Range -55 to 150
TJ Operating Junction Temperature Range -55 to 150
RθJA Thermal Resistance Junction-ambient 1 125 ℃/W
RθJC Thermal Resistance Junction-Case 1 80 ℃/W

Electrical Characteristics (TJ=25 , unless otherwise noted)

Symbol Parameter Conditions Min. Typ. Max. Unit
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 100 --- --- V
△ BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.067 --- V/℃
RDS(ON) Static Drain-Source On-Resistance VGS=10V , I D=1A --- 260 310

VGS=4.5V , I D=0.5A --- 270 320
VGS(th) Gate Threshold Voltage VGS=VDS , I =250uA 1.0 1.5 2.5 V
△VGS(th) VGS(th) Temperature Coefficient --- -4.2 --- mV/℃
IDSS Drain-Source Leakage Current VDS=80V , VGS=0V , TJ=25℃ --- --- 1 uA
IDSS Drain-Source Leakage Current VDS=80V , VGS=0V , TJ=25℃ --- --- 5 uA
IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA
gfs Forward Transconductance VDS=5V , ID=1A --- 2.4 --- S
Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2.8 5.6
Qg Total Gate Charge (10V) --- 9.7 13.6
Qgs Gate-Source Charge --- 1.6 2.2
Qgd Gate-Drain Charge --- 1.7 2.4
Td(on) Turn-On Delay Time

VDD=50V , VGS=10V ,

RG=3.3

ID=1A

--- 1.6 3.2

ns

Tr
Td(off) Turn-Off Delay Time --- 13.6 27
Tf Fall Time --- 19 38
Ciss Input Capacitance --- 508 711
Coss Output Capacitance --- 29 41
Crss Reverse Transfer Capacitance --- 16.4 23
IS Continuous Source Current 1,4 VG=VD=0V , Force Current --- --- 1.2 A
ISM Pulsed Source Current 2,4 --- --- 5 A
VSD Diode Forward Voltage2 VGS=0V , IS=1A , TJ=25℃ --- --- 1.2 V
trr Reverse Recovery Time IF=1A , dI/dt=100A/µs , --- 14 --- nS
Qrr Reverse Recovery Charge --- 9.3 --- nC
Symbol Parameter Conditions Min. Typ. Max. Unit
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 100 --- --- V
△ BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.067 --- V/℃
RDS(ON) Static Drain-Source On-Resistance VGS=10V , I D=1A --- 260 310

VGS=4.5V , I D=0.5A --- 270 320
VGS(th) Gate Threshold Voltage VGS=VDS , I =250uA 1.0 1.5 2.5 V
△VGS(th) VGS(th) Temperature Coefficient --- -4.2 --- mV/℃
IDSS Drain-Source Leakage Current VDS=80V , VGS=0V , TJ=25℃ --- --- 1 uA
IDSS Drain-Source Leakage Current VDS=80V , VGS=0V , TJ=25℃ --- --- 5 uA
IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA
gfs Forward Transconductance VDS=5V , ID=1A --- 2.4 --- S
Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2.8 5.6
Qg Total Gate Charge (10V) --- 9.7 13.6
Qgs Gate-Source Charge --- 1.6 2.2
Qgd Gate-Drain Charge --- 1.7 2.4
Td(on) Turn-On Delay Time

VDD=50V , VGS=10V ,

RG=3.3

ID=1A

--- 1.6 3.2

ns

Tr
Td(off) Turn-Off Delay Time --- 13.6 27
Tf Fall Time --- 19 38
Ciss Input Capacitance --- 508 711
Coss Output Capacitance --- 29 41
Crss Reverse Transfer Capacitance --- 16.4 23
IS Continuous Source Current 1,4 VG=VD=0V , Force Current --- --- 1.2 A
ISM Pulsed Source Current 2,4 --- --- 5 A
VSD Diode Forward Voltage2 VGS=0V , IS=1A , TJ=25℃ --- --- 1.2 V
trr Reverse Recovery Time IF=1A , dI/dt=100A/µs , --- 14 --- nS
Qrr Reverse Recovery Charge --- 9.3 --- nC

Note :

1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦300us , duty cycle ≦2%

3.The power dissipation is limited by 150 ℃ junction temperature

4 .The data is theoretically the same as ID and IDM, in real applications , should be limited by total power dissipation.

Enhancement Mode N Channel Mosfet Power Transistor Low Voltage 100V

Symbol

Dimensions in Millimeters
MIN. MAX.
A 0.900 1.150
A1 0.000 0.100
A2 0.900 1.050
b 0.300 0.500
c 0.080 0.150
D 2.800 3.000
E 1.200 1.400
E1 2.250 2.550
e 0.950TYP
e1 1.800 2.000
L 0.550REF
L1 0.300 0.500
θ

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