AP12N10D Power Switch Transistor , Original Silicon Power Transistor

AP12N10D Power Switch Transistor , Original Silicon Power Transistor

General Description:

The AP12N10D uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a
Battery protection or in other Switching application.

General Features

VDS = 100V ID = 5A
RDS(ON) < 140mΩ @ VGS=4.5V

Application

Battery protection
Load switch
Uninterruptible power supply

Package Marking and Ordering Information

Absolute Maximum Ratings at Tj=25℃ unless otherwise noted

Electrical Characteristics at Tj=25 ℃ unless otherwise specified

Attention

1, Any and all APM Microelectronics products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your APM Microelectronics representative nearest you before using any APM Microelectronics products described or contained herein in such applications.

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