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AP50N10D Dual Mosfet Switch / 50A 100V TO-252 High Power Transistor

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Shenzhen Hua Xuan Yang Electronics Co.,Ltd
City:shenzhen
Province/State:guangdong
Country/Region:china
Contact Person:MrDavid Lee
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AP50N10D Dual Mosfet Switch / 50A 100V TO-252 High Power Transistor

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Brand Name :Hua Xuan Yang
Model Number :AP50N10D
Certification :RoHS、SGS
Place of Origin :ShenZhen China
MOQ :Negotiation
Price :Negotiated
Payment Terms :L/C T/T Western Union
Supply Ability :18,000,000PCS / Per Day
Delivery Time :1 - 2 Weeks
Packaging Details :Boxed
Product name :Dual Mosfet Switch
Model :AP50N10D
Pack :TO-252
Marking :AP50N10D XXX YYYY
VDSDrain-Source Voltage :100V
VGSGate-Sou rce Voltage :±20V
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AP50N10D Dual Mosfet Switch / 50A 100V TO-252 High Power Transistor

Dual Mosfet Switch applications

Switch Mode Power Supplies (SMPS)

Residential, commercial, architectural and street lighting

DC-DC converters

Motor control

Automotive applications

Dual Mosfet Switch Description:

The AP50N10D uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V.
This device is suitable for use as a
Battery protection or in other Switching application.

Dual Mosfet Switch Features

VDS = 100V ID =50A
RDS(ON) < 25mΩ@ VGS=10V

Package Marking and Ordering Information

Product ID Pack Marking Qty(PCS)
AP50N10D TO-252 AP50N10D XXX YYYY 2500

Absolute Maximum Ratings (TC=25unless otherwise noted)

Symbol Parameter Limit Unit
VDS Drain-Source Voltage 100 V
VGS Gate-Source Voltage ±20 V
ID Drain Current-Continuous 50 A
I (100℃) Drain Current-Continuous(TC=100℃) 21 A
IDM Pulsed Drain Current 70 A
PD Maximum Power Dissipation 85 W
Derating factor 0.57 W/℃
EAS Single pulse avalanche energy (Note 5) 256 mJ
TJ,TSTG Operating Junction and Storage Temperature Range -55 To 175
RθJC Thermal Resistance, Junction-to-Case (Note 2) 1.8 ℃/W

Electrical Characteristics (TC=25unless otherwise noted)

Symbol Parameter Condition Min Typ Max Unit
BVDSS Drain-Source Breakdown Voltage VGS=0V ID=250μA 100 - V
IDSS Zero Gate Voltage Drain Current VDS=100V,VGS=0V - - 1 μA
IGSS Gate-Body Leakage Current VGS=±20V,VDS=0V - - ±100 nA
VGS(th) Gate Threshold Voltage VDS=VGS,ID=250 μA 1 3 V
RDS(ON)

Drain-Source On-State

Resistance

VGS=10V, ID=20A - 24 28 mΩ
RDS(ON)

Drain-Source On-State

Resistance

VGS=4.5V, ID=10A - 28 30 mΩ
gFS Forward Transconductance VDS=5V,ID=10A - 15 - S
Clss Input Capacitance VDS=25V,VGS=0V,
F=1.0MHz
- 2000 - PF
Coss Output Capacitance - 300 - PF
Crss Reverse Transfer Capacitance - 250 - PF
td(on) Turn-on Delay Time VDD=50V,RL=5Ω
VGS=10V,RGEN=3Ω
- 7 - nS

r

t

Turn-on Rise Time - 7 - nS
td(off) Turn-Off Delay Time - 29 - nS

f

t

Turn-Off Fall Time - 7 - nS
Qg Total Gate Charge VDS=50V,ID=10A,
VGS=10V
- 39 - nC
Qgs Gate-Source Charge - 8 - nC
Qgd Gate-Drain Charge - 12 - nC
VSD Diode Forward Voltage (Note 3) VGS=0V,IS=20A - - 1.2 V

S

I

Diode Forward Current (Note 2) - - - 30 A

rr

t

Reverse Recovery Time

TJ = 25°C, IF = 10A

di/dt = 100A/μs(Note3)

- 32 - nS
Qrr Reverse Recovery Charge - 53 - nC
ton Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by

LS+LD)

Notes:

1,Repetitive Rating: Pulse width limited by maximum junction temperature.

2,Surface Mounted on FR4 Board, t ≤ 10 sec.

3,Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.

4,Guaranteed by design, not subject to production

5,EAS Condition : Tj=25 ℃,VDD=50V,VG=10V,L=0.5mH,Rg=25Ω, IAS=32A

Attention

1, Any and all APM Microelectronics products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your APM Microelectronics representative nearest you before using any APM Microelectronics products described or contained herein in such applications.

2, APM Microelectronics assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all APM Microelectronics products described or contained herein.

3, Specifications of any and all APM Microelectronics products described or contained here instipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment.

4, APM Microelectronics Semiconductor CO., LTD. strives to supply high quality high reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives that could give rise to smoke or fire, or that could cause damage to other property. Whendesigning equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design,and structural design.

5,In the event that any or all APM Microelectronics products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law.

6, No part of this publication may be reproduced or transmitted in any form or by any means,electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of APM Microelectronics Semiconductor CO., LTD.

7, Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. APM Microelectronics believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.

8, Any and all information described or contained herein are subject to change without notice due to product/technology improvement,etc. When designing equipment, refer to the "Delivery Specification" for the APM Microelectronics product that you Intend to use.

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