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AP2322GN LOGIC ICS 0.833W 10A MOSFET Power Switch

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Shenzhen Hua Xuan Yang Electronics Co.,Ltd
City:shenzhen
Province/State:guangdong
Country/Region:china
Contact Person:MrDavid Lee
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AP2322GN LOGIC ICS 0.833W 10A MOSFET Power Switch

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Brand Name :original
Model Number :AP2322GN
Certification :RoHS、SGS
Place of Origin :China
MOQ :Negotiable
Price :Negotiate
Payment Terms :L/C T/T Western Union
Supply Ability :10,000/Month
Delivery Time :4~5 week
Packaging Details :Carton Box
State :Original new
Type :LOGIC ICS
Lead time :In stock
D/C :Newest
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AP2322GN Original General Purpose Power Transistor/MOSFET/Power Switch IC Chips

This product is sensitive to electrostatic discharge, please handle with care.

This product is not authorized to be used as a critical component of a life support system or other similar systems.

APEC shall not be liable for any liability arising from the application or use of any product or circuit described in this agreement, nor shall it assign any license under its patent rights or assign the rights of others.

APEC reserves the right to make changes to any product in this Agreement without notice to improve reliability, function or design.

Description

Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.

The SOT-23S package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.

Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)

Symbol Parameter Rating Units
VDS Drain-Source Voltage 20 V
VGS Gate-Source Voltage +8 V
ID@TA=25℃ Drain Current3, VGS @ 4.5V 2.5 A
ID@TA=70℃ Drain Current3, VGS @ 4.5V 2.0 A
IDM Pulsed Drain Current1 10 A
PD@TA=25℃ Total Power Dissipation 0.833 W
TSTG Storage Temperature Range -55 to 150
TJ Operating Junction Temperature Range -55 to 150

Thermal Data

Symbol Parameter Value Unit
Rthj-a Maximum Thermal Resistance, Junction-ambient3 150 ℃/W

AP2322G

Electrical Characteristics@Tj=25oC(unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 20 - - V
RDS(ON) Static Drain-Source On-Resistance2 VGS=4.5V, ID=1.6A - - 90 mΩ
VGS=2.5V, ID=1A - - 120 mΩ
VGS=1.8V, ID=0.3A - - 150 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=1mA 0.25 - 1 V
gfs Forward Transconductance VDS=5V, ID=2A - 2 - S
IDSS Drain-Source Leakage Current VDS=20V, VGS=0V - - 1 uA
IGSS Gate-Source Leakage VGS=+8V, VDS=0V - - +100 nA
Qg Total Gate Charge

ID=2.2A

VDS=16V VGS=4.5V

- 7 11 nC
Qgs Gate-Source Charge - 0.7 - nC
Qgd Gate-Drain ("Miller") Charge - 2.5 - nC
td(on) Turn-on Delay Time

VDS=10V ID=1A RG=3.3Ω

VGS=5V

- 6 - ns
tr Rise Time - 12 - ns
td(off) Turn-off Delay Time - 16 - ns
tf Fall Time - 4 - ns
Ciss Input Capacitance

V.GS=0V VDS=20V

f=1.0MHz

- 350 560 pF
Coss Output Capacitance - 55 - pF
Crss Reverse Transfer Capacitance - 48 - pF
Rg Gate Resistance f=1.0MHz - 3.2 4.8 Ω

Source-Drain Diode

Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage2 IS=0.7A, VGS=0V - - 1.2 V
trr Reverse Recovery Time

IS=2A, VGS=0V,

dI/dt=100A/µs

- 20 - ns
Qrr Reverse Recovery Charge - 13 - nC

Notes:

1.Pulse width limited by Max. junction temperature.

2.Pulse test

3.Surface mounted on 1 in2 copper pad of FR4 board , t <10sec ; 360 ℃/W when mounted on Min. copper pad.

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