( Electronic Components ) New AP2602GY-HF integrated circuits
Description
AP2602 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications.
The SOT-26 package is widely used for all commercial-industrial applications.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
| Symbol |
Parameter |
Rating |
Units |
| VDS |
Drain-Source Voltage |
20 |
V |
| VGS |
Gate-Source Voltage |
+12 |
V |
| ID@TA=25℃ |
Drain Current3, VGS @ 4.5V |
6.3 |
A |
| ID@TA=70℃ |
Drain Current3, VGS @ 4.5V |
5 |
A |
| IDM |
Pulsed Drain Current1 |
30 |
A |
| PD@TA=25℃ |
Total Power Dissipation |
2 |
W |
| |
Linear Derating Factor |
0.016 |
W/℃ |
| TSTG |
Storage Temperature Range |
-55 to 150 |
℃ |
| TJ |
Operating Junction Temperature Range |
-55 to 150 |
℃ |
Thermal Data
| Symbol |
Parameter |
Value |
Unit |
| Rthj-a |
Maximum Thermal Resistance, Junction-ambient3 |
62.5 |
℃/W |
AP2602GY-H
Electrical Characteristics@Tj=25oC(unless otherwise specified)
| Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Units |
| BVDSS |
Drain-Source Breakdown Voltage |
VGS=0V, ID=250uA |
20 |
- |
- |
V |
| ΔBVDSS/ΔTj |
Breakdown Voltage Temperature Coefficient |
Reference to 25℃, ID=1mA |
- |
0.1 |
- |
V/℃ |
| RDS(ON) |
Static Drain-Source On-Resistance2 |
VGS=10V, ID=5.5A |
- |
- |
30 |
mΩ |
| VGS=4.5V, ID=5.3A |
- |
- |
34 |
mΩ |
| VGS=2.5V, ID=2.6A |
- |
- |
50 |
mΩ |
| VGS(th) |
Gate Threshold Voltage |
VDS=VGS, ID=250uA |
0.5 |
0.85 |
1.2 |
V |
| gfs |
Forward Transconductance |
VDS=5V, ID=5.3A |
- |
13 |
- |
S |
| IDSS |
Drain-Source Leakage Current |
VDS=20V, VGS=0V |
- |
- |
1 |
uA |
| Drain-Source Leakage Current (Tj=55oC) |
VDS=16V ,VGS=0V |
- |
- |
10 |
uA |
| IGSS |
Gate-Source Leakage |
VGS=+12V, VDS=0V |
- |
- |
+100 |
nA |
| Qg |
Total Gate Charge2 |
ID=5.3A
VDS=10V VGS=4.5V
|
- |
8.7 |
16 |
nC |
| Qgs |
Gate-Source Charge |
- |
1.5 |
- |
nC |
| Qgd |
Gate-Drain ("Miller") Charge |
- |
3.6 |
- |
nC |
| td(on) |
Turn-on Delay Time2 |
VDS=15V |
- |
6 |
- |
ns |
| tr |
Rise Time |
ID=1A |
- |
14 |
- |
ns |
| td(off) |
Turn-off Delay Time |
RG=2Ω |
- |
18.4 |
- |
ns |
| tf |
Fall Time |
VGS=10V |
- |
2.8 |
- |
ns |
| Ciss |
Input Capacitance |
VGS=0V VDS=15V
f=1.0MHz
|
- |
603 |
1085 |
pF |
| Coss |
Output Capacitance |
- |
144 |
- |
pF |
| Crss |
Reverse Transfer Capacitance |
- |
111 |
- |
pF
|
Source-Drain Diode
| Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Units |
| VSD |
Forward On Voltage2 |
IS=1.2A, VGS=0V |
- |
- |
1.2 |
V |
| trr |
Reverse Recovery Time2 |
IS=5A, VGS=0V,
dI/dt=100A/µs
|
- |
16.8 |
- |
ns |
| Qrr |
Reverse Recovery Charge |
- |
11 |
- |
nC |
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t < 10s ; 156℃/W when mounted on min. copper pad.
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